Multi charged particle beam writing method and multi charged particle beam writing apparatus

ABSTRACT

A multi charged particle beam writing method includes performing ON/OFF switching of a beam by an individual blanking system for the beam concerned, for each beam in multi-beams of charged particle beam, with respect to each time irradiation of irradiation of a plurality of times, by using a plurality of individual blanking systems that respectively perform beam ON/OFF control of a corresponding beam in the multi-beams, and performing blanking control, in addition to the performing ON/OFF switching of the beam for the each beam by the individual blanking system, with respect to the each time irradiation of the irradiation of the plurality of times, so that the beam is in an ON state during an irradiation time corresponding to irradiation concerned, by using a common blanking system that collectively performs beam ON/OFF control for a whole of the multi-beams.

CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority fromthe prior Japanese Patent Application No. 2012-242644 filed on Nov. 2,2012 in Japan, and the prior Japanese Patent Application No. 2013-124435filed on Jun. 13, 2013 in Japan, the entire contents of which areincorporated herein by reference.

BACKGROUND OF THE INVENTION Field of the Invention

The present invention relates to a multi charged particle beam writingmethod and a multi charged particle beam writing apparatus. For example,it relates to a blanking method in multi beam writing.

Description of Related Art

The lithography technique that advances microminiaturization ofsemiconductor devices is extremely important as being a unique processwhereby patterns are formed in the semiconductor manufacturing. Inrecent years, with high integration of LSI, the line width (criticaldimension) required for semiconductor device circuits is decreasing yearby year. The electron beam (EB) writing technique, which intrinsicallyhas excellent resolution, is used for writing or “drawing” a pattern ona wafer and the like with an electron beam.

As an example employing the electron beam writing technique, there is awriting apparatus using multiple beams (multi-beams). Compared with thecase of writing a pattern by using an electron beam, since a multi-beamwriting apparatus can emit multiple radiation beams at a time, it ispossible to greatly increase the throughput. In such a writing apparatusof a multi-beam system, for example, multiple beams are formed byletting an electron beam emitted from an electron gun assembly passthrough a mask with a plurality of holes, blanking control is performedfor each of the beams, and each unblocked beam is reduced by an opticalsystem and deflected by a deflector so as to irradiate a desiredposition on a target object or “sample” (refer to, e.g., Japanese PatentApplication Laid-open (JP-A) No. 2006-261342).

In the multi-beam writing, when performing highly precise writing, thedose of an individual beam is individually controlled by an irradiationtime in order to give a specified dose onto each position on a targetobject. For highly accurately controlling the dose of each beam, it isnecessary to carry out blanking control at high speed to perform a beamON/OFF control. Conventionally, in a writing apparatus of a multi-beamsystem, a blanking control circuit for each beam is placed on a blankingplate where each blanking electrode of multiple beams is arranged.Controlling is independently performed for each beam. For example, atrigger signal for causing a beam to be ON is sent to control circuitsof all the beams. In responsive to the trigger signal, the controlcircuit of each beam applies a beam-on voltage to an electrode and,simultaneously, starts counting the irradiation time period by acounter. Then, when the irradiation time has been completed, a beam-offvoltage is applied. In performing such a control, a ten-bit controlsignal has been used, for example. However, since the space for placinga circuit on a blanking plate and the amount of current to be used arerestricted, there is no other alternative but to have an uncomplicatedcircuit for the amount of information of control signals. Therefore, ithas been difficult to build in a blanking circuit that can perform anoperation of high speed and high precision. Further, installing ablanking control circuit for each beam on a blanking plate restricts tonarrow the pitch of multiple beams. By contrast, when placing a controlcircuit for each beam outside the blanking plate and connecting them bywiring in order to secure a space for installing the circuit, since thewiring becomes long, there is a problem that crosstalk increases andwriting precision degrades.

BRIEF SUMMARY OF THE INVENTION

In accordance with one aspect of the present invention, a multi chargedparticle beam writing method includes performing ON/OFF switching of abeam by an individual blanking system for the beam concerned, for eachbeam in multi-beams of charged particle beam, with respect to each timeirradiation of irradiation of a plurality of times, by using a pluralityof individual blanking systems that respectively perform beam ON/OFFcontrol of a corresponding beam in the multi-beams, and performingblanking control, in addition to the performing ON/OFF switching of thebeam for the each beam by the individual blanking system, with respectto the each time irradiation of the irradiation of the plurality oftimes, so that the beam is in an ON state during an irradiation timecorresponding to irradiation concerned, by using a common blankingsystem that collectively performs beam ON/OFF control for a whole of themulti-beams.

In accordance with another aspect of the present invention, a multicharged particle beam writing method includes converting, for each shot,an irradiation time of each beam of multi-beams of charged particle beaminto a binary number whose number of digits is a predetermined number,and dividing, for the each shot of each beam, irradiation of a beamconcerned into irradiation of a number of times equal to the number ofdigits, where the irradiation of the number of times equal to the numberof digits is equivalent to a combination of irradiations of irradiationtime periods of the digits each indicating an irradiation time perioddefined by a decimal number converted from the converted binary numberof a corresponding digit, and irradiating the beam of the irradiationtime period corresponding to the each digit onto a target object inorder.

Further, in accordance with another aspect of the present invention, amulti charged particle beam writing apparatus includes an aperturemember in which a plurality of openings are provided to form multi-beamsby being irradiated with a charged particle beam, a plurality ofindividual blanking systems each configured to respectively perform beamON/OFF control of a corresponding beam in the multi-beams, a commonblanking system configured to collectively perform beam ON/OFF controlfor a whole of the multi-beams, and a control unit configured to controlthe common blanking system so that the common blanking system specifiesirradiation time.

Moreover, in accordance with another aspect of the present invention, amulti charged particle beam writing method includes outputting a firstON/OFF control signal for a beam by a first logic circuit for the beam,for each beam in multi-beams of charged particle beam, with respect toeach time irradiation of irradiation of a plurality of times, by using aplurality of first logic circuits each respectively outputs a beamON/OFF control signal to control a corresponding beam in themulti-beams, outputting a second ON/OFF control signal for a beam, withrespect to the each time irradiation of the irradiation of the pluralityof times, in addition to switching the first ON/OFF control signal forthe each beam by the plurality of first logic circuits, so that the beamis in an ON state during an irradiation time corresponding toirradiation concerned, by using a second logic circuit that collectivelyoutputs a beam ON/OFF control signal to control a whole of themulti-beams, and performing blanking control so that the beam concernedis in an ON state during an irradiation time corresponding to theirradiation concerned in the case both the first ON/OFF control signaland the second ON/OFF control signal are ON control signals.

Furthermore, in accordance with another aspect of the present invention,a multi charged particle beam writing apparatus includes an aperturemember in which a plurality of openings are provided to form multi-beamsby being irradiated with a charged particle beam, a first logic circuitconfigured to individually output a first ON/OFF control signal tocontrol a corresponding beam in the multi-beams, a second logic circuitconfigured to collectively output a second ON/OFF control signal tocontrol a whole of the multi-beams, and a plurality of individualblanking systems each configured, in the case both the first ON/OFFcontrol signal and the second ON/OFF control signal are ON controlsignals, to respectively perform ON/OFF control of a beam, for the eachbeam, so that the beam concerned is in an ON state during an irradiationtime corresponding to irradiation concerned.

Furthermore, in accordance with another aspect of the present invention,a multi charged particle beam writing method includes generating,respectively, for each shot, irradiation time arrangement data, whileusing a sequence whose number of terms is a predetermined number, sothat a total of values obtained by selecting or not selecting a value ofeach term of the sequence becomes an irradiation time of each beam ofmulti-beams of charged particle beam, wherein each value of the sequenceis less than or equal to a value obtained by adding 1 to a sum ofprevious values up to a value just before the each value concerned, anddividing, for each beam shot, irradiation of a beam concerned intoirradiation performed a number of times equal to the number of terms ofthe sequence, wherein the sequence is equivalent to a combination ofirradiations of irradiation time periods of the terms each indicating anirradiation time period of a corresponding value of the sequence, andirradiating the beam of the irradiation time period corresponding to avalue of each selected term onto a target object in order, based on theirradiation time arrangement data.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram showing a configuration of a writingapparatus according to the first embodiment;

FIGS. 2A and 2B are conceptual diagrams each showing a configuration ofan aperture member according to the first embodiment;

FIG. 3 is a conceptual diagram showing a configuration of a blankingplate according to the first embodiment;

FIG. 4 is a top view conceptual diagram showing a configuration of ablanking plate according to the first embodiment;

FIG. 5 is a schematic diagram showing an internal structure of anindividual blanking control circuit and a common blanking controlcircuit according to the first embodiment;

FIG. 6 is a flowchart showing main steps of a writing method accordingto the first embodiment;

FIG. 7 shows an example of a part of irradiation time arrangement dataaccording to the first embodiment;

FIG. 8 is a flowchart showing a beam ON/OFF switching operation withrespect to a part of an irradiation step of one shot according to thefirst embodiment;

FIG. 9 is a schematic diagram explaining a blanking operation accordingto the first embodiment;

FIG. 10 is a conceptual diagram explaining a writing operation accordingto the first embodiment;

FIGS. 11A to 11C are conceptual diagrams explaining examples of awriting operation in a stripe according to the first embodiment;

FIGS. 12A to 12C are conceptual diagrams explaining examples of awriting operation in a stripe according to the first embodiment;

FIGS. 13A to 13C are conceptual diagrams explaining other examples of awriting operation in a stripe according to the first embodiment;

FIGS. 14A to 14C are conceptual diagrams explaining other examples of awriting operation in a stripe according to the first embodiment;

FIGS. 15A to 15E are time charts for comparing the exposure waitingtime, using a comparative example, according to the second embodiment;

FIG. 16 is a schematic diagram showing an internal structure of anindividual blanking control circuit and a common blanking controlcircuit according to the third embodiment;

FIG. 17 is a flowchart showing a beam ON/OFF switching operation withrespect to a part of an irradiation step of one shot according to thethird embodiment;

FIG. 18 is a schematic diagram explaining an arrangement state between alogic circuit and a blanking plate 204 according to the fourthembodiment;

FIG. 19 is a schematic diagram showing a structure of a writingapparatus according to the fifth embodiment;

FIG. 20 is a schematic diagram showing an internal structure of anindividual blanking control circuit and a common blanking controlcircuit according to the fifth embodiment; and

FIG. 21 is a flowchart showing main steps of a writing method accordingto the sixth embodiment.

DETAILED DESCRIPTION OF THE INVENTION

In the following Embodiments, there will be described a configuration inwhich an electron beam is used as an example of a charged particle beam.However, the charged particle beam is not limited to the electron beam,and other charged particle beam such as an ion beam may also be used.

Moreover, in the following Embodiments, there will be described awriting apparatus and method that can increase the precision ofcontrolling a dose while maintaining the restriction on a circuitinstallation space.

First Embodiment

FIG. 1 is a schematic diagram showing a configuration of a writingapparatus according to the first embodiment. Referring to FIG. 1, awriting (or “drawing”) apparatus 100 includes a writing unit 150 and acontrol unit 160. The writing apparatus 100 is an example of a multicharged particle beam writing apparatus. The writing unit 150 includesan electron lens barrel 102 and a writing chamber 103. In the electronlens barrel 102, there are arranged an electron gun assembly 201, anillumination lens 202, an aperture member 203, a blanking plate 204, areducing lens 205, a deflector 212, a limiting aperture member 206, anobjective lens 207, and a deflector 208. In the writing chamber 103,there is arranged an XY stage 105. On the XY stage, there is placed atarget object or “sample” 101 such as a mask serving as a writing targetsubstrate when performing writing. The target object 101 is, forexample, an exposure mask used for manufacturing semiconductor devices,or a semiconductor substrate (silicon wafer) on which semiconductorelements are formed. The target object 101 may be, for example, a maskblank on which resist is applied and a pattern has not yet been formed.On the XY stage 105, further, there is arranged a mirror 210 formeasuring a position.

The control unit 160 includes a control computer 110, a memory 112, adeflection control circuit 130, a logic circuit 132, a stage positionmeasurement unit 139, and storage devices 140 and 142, such as magneticdisk drives. The control computer 110, the memory 112, the deflectioncontrol circuit 130, the stage position measurement unit 139, and thestorage devices 140 and 142 are mutually connected through a bus (notshown). Writing data is input into the storage device 140 (storage unit)from the outside to be stored therein.

In the control computer 110, there are arranged an area densitycalculation unit 60, an irradiation time calculation unit 62, a graylevel value calculation unit 64, a bit conversion unit 66, a writingcontrol unit 72, and a transmission processing unit 68. Each function,such as the area density calculation unit 60, the irradiation timecalculation unit 62, the gray level value calculation unit 64, the bitconversion unit 66, the writing control unit 72, or the transmissionprocessing unit 68 may be configured by hardware such as an electroniccircuit, or by software such as a program implementing these functions.Alternatively, they may be configured by a combination of software andhardware. Data which is input and output to/from the area densitycalculation unit 60, the irradiation time calculation unit 62, the graylevel value calculation unit 64, the bit conversion unit 66, the writingcontrol unit 72, and the transmission processing unit 68, and data beingcalculated are stored in the memory 112 each time.

FIG. 1 shows a structure necessary for explaining the first embodiment.Other structure elements generally necessary for the writing apparatus100 may also be included.

FIGS. 2A and 2B are conceptual diagrams each showing an example of theconfiguration of an aperture member according to the first embodiment.In FIG. 2A, holes (openings) 22 are formed at a predeterminedarrangement pitch, in the shape of a matrix, in the aperture member 203,wherein m×n (m≥2, n≥2) holes 22 are arranged in m columns in thevertical direction (the y direction) and n rows in the horizontaldirection (the x direction). In FIG. 2A, holes 22 of 512 (rows)×8(columns) are formed, for example. Each hole 22 is a quadrangle of thesame dimensions and shape. Alternatively, each hole may be a circle ofthe same circumference. In this case, there is shown an example of eachrow having eight holes 22 from A to H in the x direction. Multi-beams 20are formed by letting portions of an electron beam 200 respectively passthrough a corresponding hole of a plurality of holes 22. Here, there isshown the case where the holes 22 are arranged in a plurality of columnsand rows in both the x and the y directions, but it is not limitedthereto. For example, it is also acceptable to arrange a plurality ofholes 22 in only one row or in only one column, that is, in one rowwhere a plurality of holes are arranged as columns, or in one columnwhere a plurality of holes are arranged as rows. Moreover, the method ofarranging the holes 22 is not limited to the case of FIG. 2A where holesare aligned in a grid. It is also preferable to arrange the holes 22 asshown in FIG. 2B where the position of each hole in the second row isshifted from the position of each hole in the first row by a dimension“a” in the horizontal direction (x direction), for example. Similarly,it is also preferable to arrange the holes 22 such that the position ofeach hole in the third row is shifted from the position of each hole inthe second row by a dimension “b” in the horizontal direction (xdirection).

FIG. 3 is a conceptual diagram showing the configuration of a blankingplate according to the first embodiment. FIG. 4 is a top view conceptualdiagram showing the configuration of a blanking plate according to thefirst embodiment. In the blanking plate 204, a passage hole is formed tobe corresponding to the arrangement position of each hole 22 of theaperture member 203, and a pair of electrodes 24 and 26 (blanker:blanking deflector) is arranged for each passage hole. An amplifier 46for applying voltage is respectively arranged at one (for example, theelectrode 24) of the two electrodes 24 and 26 for each beam. A logiccircuit 41 is independently arranged at the amplifier 46 for each beamrespectively. The other one (for example, the electrode 26) of the twoelectrodes 24 and 26 for each beam is grounded. An electron beam 20passing through a corresponding passage hole is respectively deflectedby the voltage applied to the two electrodes 24 and 26 being a pair.Blanking control is performed by this deflection. Thus, a plurality ofblankers respectively perform blanking deflection of a correspondingbeam in the multiple beams having passed through a plurality of holes 22(openings) of the aperture member 203.

FIG. 5 is a schematic diagram showing the internal structure of anindividual blanking control circuit and a common blanking controlcircuit according to the first embodiment. Referring to FIG. 5, a shiftregister 40, a register 42, and an AND computing unit 44 (logicalproduct computing unit) are arranged in each logic circuit 41 forindividual blanking control arranged at the blanking plate 204 in thebody of the writing apparatus 100. The AND computing unit 44 is used,for example, when a problem occurs in the register operation, in orderto compulsorily make all the individual blanking be beam OFF state, butit may be omitted in the first embodiment. According to the firstembodiment, a one-bit control signal is used for individual blankingcontrol for each beam, which has conventionally been controlled by, forexample, a ten-bit control signal. That is, a one-bit control signal isinput/output into/from the shift register 40, the register 42, and theAND computing unit 44. Since the amount of information of a controlsignal is small, an installation area of the control circuit can be madesmall. In other words, even when a logic circuit is arranged on theblanking plate 204 whose installation space is small, more beams can bearranged at a smaller beam pitch. This enables the amount of currentpassing the blanking plate to be increased, and therefore, a writingthroughput can be improved.

Moreover, an amplifier is arranged at the deflector 212 for commonblanking, and a register 50 and a counter 52 (an example of a shot timecontrol unit) are arranged at the logic circuit 132. These do notperform plural different controlling at the same time, and therefore, itis sufficient to use one circuit to perform ON/OFF control. Accordingly,even when arranging a circuit for a high speed response, no problemoccurs with respect to the restriction on the installation space and thecurrent to be used in the circuit. Therefore, this amplifier is operatedat very high speed compared with an amplifier realizable on a blankingaperture. This amplifier is controlled by a ten-bit control signal, forexample. That is, for example, a ten-bit control signal is input/outputinto/from the register 50 and the counter 52.

According to the first embodiment, blanking control of each beam isperformed by using both the beam ON/OFF control by each logic circuit 41for individual blanking control described above and the beam ON/OFFcontrol by the logic circuit 132 for common blanking control thatcollectively control all the multiple beams.

FIG. 6 is a flowchart showing main steps of a writing method accordingto the first embodiment. In FIG. 6, a series of steps: a pattern areadensity calculation step (S102), a shot time period (irradiation time) Tcalculation step (S104), a gray level value N calculation step (S106), aconversion to binary number step (S108), an irradiation time arrangementdata output step (S110), a target digit data transmission step (S112), awriting step (S114) based on irradiation time of a target digit, adetermination step (S120), a digit change step (S122), and adetermination step (S124) are executed. The writing step (S114) based onirradiation time of a target digit executes, as its internal steps, aseries of steps: an individual beam ON/OFF switching step (S116) and acommon beam ON/OFF switching step (S118).

In the pattern area density calculation step (S102), the area densitycalculation unit 60 reads writing data from the storage device 140, andcalculates the area density of a pattern arranged in the writing regionof the target object 101 or in each mesh region of a plurality of meshregions made by virtually dividing a chip region to be written intomeshes. For example, the writing region of the target object 101 or achip region to be written is divided into strip-shaped stripe regionseach having a predetermined width. Then, each stripe region is virtuallydivided into a plurality of mesh regions described above. It ispreferable that the size of a mesh region is, for example, a beam size,or smaller than a beam size. For example, the size of a mesh region ispreferably about 10 nm. The area density calculation unit 60 readscorresponding writing data from the storage device 140 for each striperegion, and assigns a plurality of figure patterns defined in thewriting data to a mesh region, for example. Then, the area density of afigure pattern arranged in each mesh region is to be calculated.

In the shot time period (irradiation time) T calculation step (S104),the irradiation time calculation unit 62 calculates an irradiation timeT (which hereinafter will also be called a shot time period or anexposure time) of the electron beam per shot, for each predeterminedsized mesh region. When performing multi-pass writing, an irradiationtime T of the electron beam per shot in each hierarchy (or “each writingprocess”) of multi-pass writing is to be calculated. It is preferable toobtain an irradiation time T, being a reference, to be in proportion tothe area density of a calculated pattern. Moreover, it is preferablethat the irradiation time T to be finally calculated is a timeequivalent to a dose after correction, that is a dose having beencorrected with respect to a dimension change amount for a phenomenoncausing dimension variations, such as a proximity effect, a foggingeffect, or a loading effect not shown. The size of a plurality of meshregions for defining the irradiation time T and the size of a pluralityof mesh regions where a pattern area density is defined may be the samesize or different sizes. When they are different sizes, each irradiationtime T is calculated after interpolating an area density by linearinterpolation, etc. The irradiation time T for each mesh region isdefined in an irradiation time map, and the irradiation time map isstored in the storage device 142, for example.

In the gray level value N calculation step (S106), the gray level valuecalculation unit 64 calculates a gray level value N being an integer atthe time of defining the irradiation time T for each mesh region,defined in the irradiation time map, by using a predeterminedquantization unit Δ. The irradiation time T is defined by the followingequation (1).

T=ΔN  (1)

Therefore, the gray level value N is defined as an integer valueobtained by dividing the irradiation time T by a quantization unit Δ.The quantization unit Δ can be variously set, and, for example, it canbe defined by 1 ns (nanosecond), etc., for example. It is preferablethat a value of 1 to 10 ns, for example, is used as the quantizationunit Δ. Δ indicates a quantization unit for controlling, such as a clockperiod, in the case of performing control by a counter.

In the conversion to binary number step (S108), the bit conversion unit66 converts, for each shot, the irradiation time (in this case, a graylevel value N) of each of multiple beams into a predetermined n-digitbinary value. For example, when N=50, since it is 50=2¹+2⁴+2⁵, ifconverting into a 10-digit binary value, it becomes “0000110010”. Forexample, if N=500, it is “0111110100”. For example, if N=700, it is“1010111100”. For example, if N=1023, it is “1111111111”. For each shot,the irradiation time of each beam is equivalent to an irradiation timedefined for a mesh region to be irradiated by each beam concerned.Thereby, the irradiation time T is defined by the following equation(2).

$\begin{matrix}{T = {\Delta \; {\sum\limits_{k = 0}^{n - 1}{a_{k}2^{k}}}}} & (2)\end{matrix}$

a_(k) indicates a value (1 or 0) of each digit in the case defining thegray level value N by a binary number. Although it is sufficient for n,being the number of digits, to be two or more, preferably it should befour or more digits, and more preferably, it should be eight or moredigits.

According to the first embodiment, for each beam shot, irradiation ofeach beam shot concerned is divided into irradiation of n times, where nindicates the number of digits of a binary number sequence, wherein theirradiation of n times is equivalent to a combination of irradiations ofthe irradiation time periods of the digits each indicating anirradiation time period defined by a decimal number converted from abinary number of a corresponding digit of the n-digit binary numberhaving been converted. In other words, one shot is divided into aplurality of irradiation steps of irradiation time periods of Δa₀2⁰,Δa₁2¹, . . . , Δa_(k)2^(k), . . . , Δa_(n-1)2^(n-1). In the case of n,the number of digits, being 10, that is n=10, one shot is divided intoirradiation steps of ten times.

For example, in the case of n, the number of digits, being 10, that isn=10, if N=700, the irradiation time of the tenth digit (the tenth bit)is Δ×512. The irradiation time of the ninth digit (the ninth bit) isΔ×0=0. The irradiation time of the eighth digit (the eighth bit) isΔ×128. The irradiation time of the seventh digit (the seventh bit) isΔ×0=0. The irradiation time of the sixth digit (the sixth bit) is Δ×32.The irradiation time of the fifth digit (the fifth bit) is Δ×16. Theirradiation time of the fourth digit (the fourth bit) is Δ×8. Theirradiation time of the third digit (the third bit) is Δ×4. Theirradiation time of the second digit (the second bit) is Δ×0=0. Theirradiation time of the first digit (the first bit) is Δ×0=0.

For example, in the case of performing irradiation in order from thelargest digit, if Δ=1 ns, the first irradiation step is 512 ns (beam ON)irradiation. The second irradiation step is 0 ns (beam OFF) irradiation.The third irradiation step is 128 ns (beam ON) irradiation. The fourthirradiation step is 0 ns (beam OFF) irradiation. The fifth irradiationstep is 32 ns (beam ON) irradiation. The sixth irradiation step is 16 ns(beam ON) irradiation. The seventh irradiation step is 8 ns (beam ON)irradiation. The eighth irradiation step is 4 ns (beam ON) irradiation.The ninth irradiation step is 0 ns (beam OFF) irradiation. The tenthirradiation step is 0 ns (beam OFF) irradiation.

As described above, according to the first embodiment, for each beamshot, irradiation of each beam shot concerned is divided intoirradiation of n times, where n indicates the number of digits of abinary number sequence, wherein the irradiation of n times is equivalentto a combination of each digit indicating an irradiation time defined bya decimal number converted from the converted binary number of eachdigit of the n-digit binary number. Then, as described later, the targetobject 101 is irradiated in order by beam of irradiation timecorresponding to each digit.

In the irradiation time arrangement data output step (S110), thetransmission processing unit 68 outputs irradiation time arrangementdata having been converted into binary data to the deflection controlcircuit 130, for each beam shot.

In the target digit data transmission step (S112), the deflectioncontrol circuit 130 outputs, for each shot, irradiation time arrangementdata to the logic circuit 41 for each beam. Moreover, synchronized withthis, the deflection control circuit 130 outputs timing data of eachirradiation step to the logic circuit 132 for common blanking.

FIG. 7 shows an example of a part of irradiation time arrangement dataaccording to the first embodiment. Referring to FIG. 7, there is shown apart of irradiation time arrangement data of a predetermined shot ofbeams 1 to 5 in the multiple beams, for example. The example of FIG. 7shows irradiation time arrangement data of the k-th bit (k-th digit)irradiation step to the (k−3)th bit ((k−3)th digit) irradiation step ofthe beams 1 to 5. In the example of FIG. 7, as to the beam 1, data“1101” is described for the irradiation steps from the k-th bit (k-thdigit) to the (k−3)th bit ((k−3)th digit). As to the beam 2, data “1100”is described for the irradiation steps from the k-th bit (k-th digit) tothe (k−3)th bit ((k−3)th digit). As to the beam 3, data “0110” isdescribed for the irradiation steps from the k-th bit (k-th digit) tothe (k−3)th bit ((k−3)th digit). As to the beam 4, data “0111” isdescribed for the irradiation steps from the k-th bit (k-th digit) tothe (k−3)th bit ((k−3)th digit). As to the beam 5, data “1011” isdescribed for the irradiation steps from the k-th bit (k-th digit) tothe (k−3)th bit ((k−3)th digit).

According to the first embodiment, as shown in FIG. 5, since the shiftregister 40 is used for the logic circuit 41, the deflection controlcircuit 130 transmits data of the same bit (the same number of digits)to each logic circuit 41 of the blanking plate 204 in the order of beamarrangement (or in the order of identification number). Moreover, aclock signal (CLK1) for synchronization, a read signal (read) for dataread-out, and a gate signal (BLK) are output. In the example of FIG. 7,as data of the k-th bit (k-th digit) of the beams 1 to 5, each one bitdata of “10011” is transmitted from the posterior beam. The shiftregister 40 of each beam transmits data to the next shift register 40 inorder from the top, based on a clock signal (CLK1). For example, withrespect to the data of the k-th bit (k-th digit) of the beams 1 to 5,based on clock signals of five times, “1” being one bit data is storedin the shift register 40 of the beam 1. “1” being one bit data is storedin the shift register 40 of the beam 2. “0” being one bit data is storedin the shift register 40 of the beam 3. “0” being one bit data is storedin the shift register 40 of the beam 4. “1” being one bit data is storedin the shift register 40 of the beam 5.

Next, in response to an input of a read signal (read), the register 42of each beam reads the data of the k-th bit (k-th digit) of each beamfrom the shift register 40. In the example of FIG. 7, as the data of thek-th bit (k-th digit), “1” being one bit data is stored in the register42 of the beam 1. As the data of the k-th bit (k-th digit), “1” beingone bit data is stored in the register 42 of the beam 2. As the data ofthe k-th bit (k-th digit), “0” being one bit data is stored in theregister 42 of the beam 3. As the data of the k-th bit (k-th digit), “0being one bit data is stored in the register 42 of the beam 4. As thedata of the k-th bit (k-th digit), “1” being one bit data is stored inthe register 42 of the beam 5. When inputting the data of the k-th bit(k-th digit), the individual register 42 of each beam outputs, based onthe data, an ON/OFF signal to the AND computing unit 44. If the data ofthe k-th bit (k-th digit) is “1”, an ON signal is output, and if it is“0”, an OFF signal is output. Then, when the BLK signal is an ON signaland the signal of the register 42 is ON, the AND computing unit 44outputs an ON signal to the amplifier 46, and the amplifier 46 appliesan ON voltage to the electrode 24 of the individual blanking deflector.In the case other than the above, the AND computing unit 44 outputs anOFF signal to the amplifier 46, and the amplifier 46 applies an OFFvoltage to the electrode 24 of the individual blanking deflector.

While the data of the k-th bit (k-th digit) is being processed, thedeflection control circuit 130 transmits the data of the (k−1) th bit((k−1)th digit) to each logic circuit 41 of the blanking plate 204, inthe order of beam arrangement (or in the order of identificationnumber). In the example of FIG. 7, as the data of the (k−1)th bit((k−1)th digit) of the beams 1 to 5, each one bit data of “01111” istransmitted from the posterior beam. The shift register 40 of each beamtransmits the data to the next shift register 40 in order from the top,based on a clock signal (CLK1). For example, with respect to the data ofthe (k−1)th bit ((k−1)th digit) of the beams 1 to 5, based on clocksignals of five times, “1” being one bit data is stored in the shiftregister 40 of the beam 1. “1” being one bit data is stored in the shiftregister 40 of the beam 2. “1” being one bit data is stored in the shiftregister 40 of the beam 3. “1” being one bit data is stored in the shiftregister 40 of the beam 4. “0” being one bit data is stored in the shiftregister 40 of the beam 5. Based on the read signal of the (k−1)th bit((k−1)th digit), the register 42 of each beam reads data of the (k−1)thbit ((k−1)th digit) of each beam, from the shift register 40. Similarly,it should go to the data processing of the first bit (the first digit).

The AND computing unit 44 shown in FIG. 5 may be omitted. However, it iseffective in that a beam can be controlled to be OFF by the ANDcomputing unit 44 in the case of not being able to make the beam OFFbecause of a trouble of elements of the logic circuit 41. Although adata transmission channel for one bit where the shift registers arearranged in series is used in FIG. 5, it is also effective to provide aplurality of parallel transmission channels in order to improve thespeed of transmission.

In the writing step (S114) based on irradiation time of a target digit,for each beam shot, writing is performed based on the irradiation timeof a target digit (for example, the k-th bit (k-th digit)) which isobtained by dividing the irradiation into a plurality of irradiationsteps.

FIG. 8 is a flowchart showing a beam ON/OFF switching operation withrespect to a part of an irradiation step of one shot according to thefirst embodiment. FIG. 8 shows one beam (beam 1) in multiple beams. Inthe example of FIG. 7, the irradiation time arrangement data of the k-thbit (k-th digit) to the (k−3)th bit ((k−3)th digit) is represented by“1101”. First, in response to an input of a read signal of the k-th bit(the k-th digit), the individual register 42 (individual register 1)outputs an ON/OFF signal based on the stored data of the k-th bit (thek-th digit). Referring to FIG. 8, an ON signal is output. According tothe first embodiment, since it is the case of a one-bit signal, withrespect to the individual register 42, data output is maintained untilthe next (k−1)th bit ((k−1)th digit) data is read.

Since the data of the k-th bit (k-th digit) is data indicating ON, theindividual amplifier 46 (individual amplifier 1) outputs an ON voltageto be applied to the blanking electrode 24 for the beam 1. On the otherhand, in the logic circuit 132 for common blanking, ON or OFF isswitched depending upon timing data of ten bits of each irradiationstep. In the common blanking system, an ON signal is output during theirradiation time of each irradiation step. For example, if Δ=1 ns, theirradiation time of the first irradiation step (for example, the tenthdigit (the tenth bit)) is Δ×512=512 ns. The irradiation time of thesecond irradiation step (for example, the ninth digit (the ninth bit))is Δ×256=256 ns. The irradiation time of the third irradiation step (forexample, the eighth digit (the eighth bit)) is Δ×128=128 ns. Similarly,an ON signal is output during the irradiation time of each digit (eachbit), hereinafter. In the logic circuit 132, when timing data of eachirradiation step is input into the register 50, the register 50 outputsdata indicating ON of the k-th digit (k-th bit), the counter 52 countsthe irradiation time of the k-th digit (k-th bit), and controlling isperformed to be OFF after the irradiation time has passed.

In the common blanking system, compared with ON/OFF switching of theindividual blanking system, ON/OFF switching is performed after thevoltage stabilization time (settling time) S1/S2 of the amplifier 46 haspassed. In the example of FIG. 8, after the individual amplifier 1 hasbecome ON and the settling time S1 of the individual amplifier 1 at thetime of switching from OFF to ON has passed, the common amplifierbecomes ON. Thereby, beam irradiation at an unstable voltage at the timeof rise of the individual amplifier 1 can be eliminated. Then, thecommon amplifier becomes OFF when the irradiation time of the k-th digit(k-th bit) has passed. Consequently, in the case of both the individualamplifier and the common amplifier being ON, an actual beam becomes ON,and irradiates the target object 101. Therefore, it is controlled suchthat the ON time of the common amplifier becomes the irradiation time ofthe actual beam. In other words, the common blanking system specifiesthe irradiation time. That is, it is controlled such that the commonamplifier and the deflector 212 specify the irradiation time by usingthe counter 52 (irradiation time control unit). On the other hand, inthe case where the common amplifier becomes ON when the individualamplifier 1 is OFF, after the individual amplifier 1 becomes OFF and thesettling time S2 of the individual amplifier 1 at the time of switchingfrom ON to OFF has passed, the common amplifier becomes ON. Thereby,beam irradiation at an unstable voltage at the time of fall of theindividual amplifier 1 can be eliminated. As described in FIG. 8, if theoperation of the individual amplifier starts after the common amplifieris turned off, an unstable operation can be eliminated and accurate beamirradiation can be executed.

As described above, in the individual beam ON/OFF switching step (S116),beam ON/OFF control is individually performed for a corresponding beamin multiple beams by a plurality of individual blanking systems(blanking plate 204, etc.), and, for each beam, with respect to anirradiation step (irradiation) of the k-th digit (k-th bit), beam ON/OFFswitching is performed by the individual blanking system for the beamconcerned. In the example of FIG. 8, since the beam is not in the OFFstate in the irradiation step of the (k−1)th digit ((k−1)th bit),switching from ON to OFF is not performed. However, for example, if thebeam is in the OFF state in the irradiation step of the (k−1) the digit((k−1)th bit), it should be understood that switching from ON to OFF isperformed.

In the common beam ON/OFF switching step (S118), with respect to theirradiation step (irradiation) of the k-th digit (k-th bit), in additionto the performing beam ON/OFF switching for each beam by the individualblanking system, beam ON/OFF controlling is collectively performed bythe common blanking system (the logic circuit 132, the deflector 212,etc.) for the whole of the multiple beams, and blanking control isperformed so that the beam may be in the ON state during the irradiationtime corresponding to the irradiation step (irradiation) of the k-thdigit (k-th bit).

As described above, since there is a restriction on the installationarea of the circuit and the current to be used in the circuit in theblanking plate 204, a simple amplifier circuit is used. Therefore, it isalso limited in reducing the settling time of the individual amplifier.By contrast, in the common blanking system, a highly precise amplifiercircuit of sufficient size, current, and scale can be installed outsidethe lens barrel. Therefore, the settling time of the common amplifiercan be shortened. Thus, according to the first embodiment, it ispossible to eliminate a voltage unstable time and a noise componentcontaining crosstalk of the individual amplifier on the blanking plateand to perform a blanking operation based on a highly preciseirradiation time by, after the beam becomes in the ON state by theindividual blanking system (or after a read signal of a target digit isoutput), letting the beam to be ON by the common blanking system afterthe settling time has passed.

In the determination step (S120), the writing control unit 72 determineswhether transmission of irradiation time arrangement data with respectto all the digits has been completed or not. When it has not beencompleted yet, it goes to the digit change step (S122). When it has beencompleted, it goes to the determination step (S124).

In the digit change step (S122), the writing control unit 72 changes atarget bit (digit). For example, the target digit is changed to the(k−1)th digit ((k−1)th bit) from the k-th digit (k-th bit). Then, itreturns to the target digit data transmission step (S112). With respectto the processing of the (k−1)th digit ((k−1)th bit), the target digitdata transmission step (S112) to the digit change step (S122) areexecuted. Then, it is similarly repeated until processing of irradiationtime arrangement data with respect to all the digits have been completedin the determination step (S120).

In the example of FIG. 8, after the beam ON time for the irradiationstep of the k-th digit (k-th bit) has passed, a read signal of the(k−1)th digit ((k−1)th bit) is input into the register 42. In theregister 42, as to the beam 1, since the data of the (k−1)th digit((k−1)th bit) “1”, it is continued to output an ON signal. Therefore,the output of the individual amplifier 1 becomes ON, and an ON voltageis applied to the electrode 24 for individual blanking. Similarly, afterthe settling time of the individual amplifier 1 has passed, the beam ismade to be ON by the common blanking system. Then, after the irradiationtime of the (k−1)th digit ((k−1)th bit) has passed, the beam is made tobe OFF by the common blanking system.

Next, after the beam ON time for the irradiation step of the (k−1)thdigit ((k−1)th bit) has passed, a read signal of the (k−2)th digit((k−2)th bit) is input into the register 42. In the register 42, as tothe beam 1, since the data of the (k−2)th digit ((k−2)th bit) is “0”, itis switched to output an OFF signal. Therefore, the output of theindividual amplifier 1 becomes OFF, and an OFF voltage is applied to theelectrode 24 for individual blanking. Similarly, after the settling timeof the individual amplifier 1 has passed, the beam is made to be ON bythe common blanking system. However, since the output of the individualamplifier 1 is OFF, consequently, the beam 1 is made to be OFF. Then,after the irradiation time of the (k−2)th digit ((k−2)th bit) haspassed, the beam is made to be OFF by the common blanking system.

Next, after the beam ON time for the irradiation step of the (k−2)thdigit ((k−2)th bit) has passed, a read signal of the (k−3)th digit((k−3)th bit) is input into the register 42. In the register 42, as tothe beam 1, since the data of the (k−3)th digit ((k−3)th bit) is “1”, itis switched to output an ON signal. Therefore, the output of theindividual amplifier 1 becomes ON, and an ON voltage is applied to theelectrode 24 for individual blanking. Similarly, after the settling timeof the individual amplifier 1 has passed, the beam is made to be ON bythe common blanking system. This time, since the output of theindividual amplifier 1 is ON, consequently, the beam 1 is made to be ON.Then, after the irradiation time of the (k−3)th digit ((k−3)th bit) haspassed, the beam is made to be OFF by the common blanking system.

As described above, for each beam in multiple beams, beam ON/OFFswitching is performed by the individual blanking system for the beamconcerned, with respect to each time irradiation of irradiationperformed the number of times equal to the number of digits (irradiationsteps performed the number of times equal to the number of digits), byusing a plurality of individual blanking systems that respectivelyperform beam ON/OFF control of a corresponding beam in the multiplebeams. Simultaneously, with respect to each time irradiation ofirradiation performed the number of times equal to the number of digits(irradiation steps performed the number of times equal to the number ofdigits), in addition to the performing beam ON/OFF switching for eachbeam by the individual blanking system, blanking control is performed sothat the state of the beam may be ON during the irradiation timecorresponding to irradiation of the digit concerned by using the commonblanking system that collectively performs beam ON/OFF control for thewhole of multiple beams. By the switching operation of the individualblanking system and the common blanking system, beam of the irradiationtime respectively corresponding to each digit irradiates the targetobject 101 in order.

The electron beam 200 emitted from the electron gun assembly 201(emission unit) almost perpendicularly illuminates the whole of theaperture member 203 by the illumination lens 202. A plurality of holes(openings), each being a quadrangle, are formed in the aperture member203. The region including all the plurality of holes is irradiated withthe electron beam 200. For example, a plurality of quadrangular electronbeams (multiple beams) 20 a to 20 e are formed by letting parts of theelectron beam 200 irradiating the positions of a plurality of holes passthrough a corresponding hole of the plurality of holes of the aperturemember 203 respectively. The multiple beams 20 a to 20 e respectivelypass through a corresponding blanker (the first deflector: individualblanking system) of the blanking plate 204. Each blanker respectivelydeflects (performs blanking deflection) the electron beam 20 passingindividually.

FIG. 9 is a schematic diagram explaining a blanking operation accordingto the first embodiment. The multiple beams 20 a, 20 b, . . . , 20 e,having passed through the blanking plate 204 are reduced by the reducinglens 205, and go toward the hole at the center of the limiting aperturemember 206. At this stage, the electron beam 20 which was deflected bythe blanker of the blanking plate 204 deviates from the hole of thecenter of the limiting aperture member 206 (blanking aperture member)and is blocked by the limiting aperture member 206. On the other hand,if the electron beam 20 which was not deflected by the blanker of theblanking plate 204 is not deflected by the deflector 212 (commonblanking system), it passes through the hole at the center of thelimiting aperture member 206, as shown in FIG. 1. Blanking control isperformed by combination of ON/OFF of the individual blanking system andON/OFF of the common blanking system so as to control ON/OFF of thebeam. Thus, the limiting aperture member 206 blocks each beam which wasdeflected to be a beam OFF state by the individual blanking system orthe common blanking system. Then, beam of an irradiation step obtainedby dividing one beam shot is formed by beams having been made duringfrom a beam ON state to a beam OFF state and having passed through thelimiting aperture member 206. The multi-beams 20 having passed throughthe limiting aperture member 206 are focused by the objective lens 207in order to be a pattern image of a desired reduction ratio, andrespective beams (the entire multi-beams 20) having passed through thelimiting aperture member 206 are collectively deflected in the samedirection by the deflector 208 so as to irradiate respective irradiationpositions on the target object 101. While the XY stage 105 iscontinuously moving, controlling is performed by the deflector 208 sothat irradiation positions of beams may follow the movement of the XYstage 105, for example. Ideally, multi-beams 20 to irradiate at a timeare aligned at pitches obtained by multiplying the arrangement pitch ofa plurality of holes of the aperture member 203 by a desired reductionratio described above. The writing apparatus 100 performs a writingoperation by the raster scan method which continuously irradiates shotbeams in order, and when writing a desired pattern, a required beam iscontrolled by blanking control to be ON according to the pattern.

In the determination step (S124), the writing control unit 72 determineswhether all the shots have been completed. If all the shots have beencompleted, it ends. If all the shots have not been completed yet, itreturns to the gray level value N calculation step (S106), and the stepsfrom the gray level value N calculation step (S106) to the determinationstep (S124) are repeated until all the shots have been completed.

FIG. 10 is a conceptual diagram explaining a writing operation accordingto the first embodiment. As shown in FIG. 10, a writing region 30 of thetarget object 101 is virtually divided into a plurality of strip-shapedstripe regions 32 each having a predetermined width in the y direction,for example. Each of the stripe regions 32 serves as a writing unitregion. The XY stage 105 is moved and adjusted such that an irradiationregion 34 to be irradiated with one-time irradiation of the multi-beams20 is located at the left end of the first stripe region 32 or at aposition more left than the left end, and then writing is started. Whenwriting the first stripe region 32, the writing advances relatively inthe x direction by moving the XY stage 105 in the −x direction, forexample. The XY stage 105 is continuously moved at a predeterminedspeed, for example. After writing the first stripe region 32, the stageposition is moved in the −y direction and adjusted such that theirradiation region 34 is located at the right end of the second striperegion 32 or at a position more right than the right end and located tobe relatively in the y direction. Then, similarly, writing advances inthe −x direction by moving the XY stage 105 in the x direction, forexample. That is, writing is performed while alternately changing thedirection, such as performing writing in the x direction in the thirdstripe region 32, and in the −x direction in the fourth stripe region32, and thus, the writing time can be reduced. However, the writingoperation is not limited to the case of performing writing whilealternately changing the direction, and it is also acceptable to performwriting in the same direction when writing each stripe region 32. By oneshot, a plurality of shot patterns of the same number as the holes 22are formed at a time by multiple beams which have been formed by passingthrough respective corresponding holes 22 of the aperture member 203.

FIGS. 11A to 11C are conceptual diagrams explaining examples of awriting operation in a stripe according to the first embodiment. Theexamples of FIGS. 11A to 11C show the cases where writing is performedin a stripe by using multiple beams of 4×4 in the x and y directions,for example. The examples of FIGS. 11A to 11C show the cases where astripe region is divided in the y direction by twice the width of anirradiation region of the whole multi-beam, for example. There is shownthe case where exposure (writing) of one irradiation region by the wholeof multiple beams is completed by shots of four times (one shot is atotal of a plurality of irradiation steps) performed while shifting theirradiation position by one mesh in the x direction or the y direction.First, the upper region of the stripe region is to be written. FIG. 11Ashows the mesh region irradiated by the first one-shot (one shot is atotal of a plurality of irradiation steps). Next, as shown in FIG. 11B,the second one-shot (one shot is a total of a plurality of irradiationsteps) is performed while shifting the position in the y direction tothe mesh region having not been irradiated yet. Next, as shown in FIG.11C, the third one-shot (one shot is a total of a plurality ofirradiation steps) is performed while shifting the position in the xdirection to the mesh region having not been irradiated yet.

FIGS. 12A to 12C are conceptual diagrams explaining examples of awriting operation in a stripe according to the first embodiment. FIGS.12A to 12C are continued from FIG. 11C. As shown in FIG. 12A, the fourthone-shot (one shot is a total of a plurality of irradiation steps) isperformed while shifting the position in the y direction to the meshregion having not been irradiated yet. Exposure (writing) of one ofirradiation regions for the whole of multiple beams is completed bythese four times shots (one shot is a total of a plurality ofirradiation steps). Next, the lower region of the stripe region is to bewritten. As shown in FIG. 12B, the lower region of the stripe region isirradiated by the first one-shot (one shot is a total of a plurality ofirradiation steps). Next, the second one-shot (one shot is a total of aplurality of irradiation steps) is performed while shifting the positionin the y direction to the mesh region having not been irradiated yet.Next, the third one-shot (one shot is a total of a plurality ofirradiation steps) is performed while shifting the position in the xdirection to the mesh region having not been irradiated yet. The fourthone-shot (one shot is a total of a plurality of irradiation steps) isperformed while shifting the position in the y direction to the meshregion having not been irradiated yet. By the operations describedabove, writing of the first row in the stripe region in the irradiationregion of multiple beams is completed. Then, as shown in FIG. 12C,writing is to be similarly performed for the second row of the multiplebeam irradiation region while shifting the position in the x direction.The whole stripe region can be written by repeating the operationsdescribed above.

FIGS. 13A to 13C are conceptual diagrams explaining other examples of awriting operation in a stripe according to the first embodiment. FIGS.13A to 13C show examples in which writing in a stripe is performed using4×4 multiple beams in the x and y directions. The examples of FIG. 13Ato FIG. 13C show the case where there is a distance between beams and astripe region is divided in the y direction by a width somewhat greaterthan or equal to the irradiation region of the whole of multiple beams,for example. Exposure (writing) of one irradiation region by the wholeof multiple beams is completed by shots of sixteen times (one shot is atotal of a plurality of irradiation steps) performed while shifting theirradiation position by one mesh in the x direction or the y direction.FIG. 13A shows the mesh region irradiated by the first one-shot (oneshot is a total of a plurality of irradiation steps). Next, as shown inFIG. 13B, the second one-shot, the third one-shot, and the fourthone-shot (one shot is a total of a plurality of irradiation steps) areperformed while shifting the position by one mesh, one by one, in the ydirection to the mesh region having not been irradiated yet. Next, asshown in FIG. 13C, the fifth one-shot (one shot is a total of aplurality of irradiation steps) is performed while shifting the positionby one mesh in the x direction to the mesh region having not beenirradiated yet. Next, the sixth one-shot, the seventh one-shot, and theeighth one-shot (one shot is a total of a plurality of irradiationsteps) are performed while shifting the position by one mesh, one byone, in the y direction to the mesh region having not been irradiatedyet.

FIGS. 14A to 14C are conceptual diagrams explaining other examples of awriting operation in a stripe according to the first embodiment. FIGS.14A to 14C are continued from FIG. 13C. As shown in FIG. 14A, the ninthone-shot to the sixteenth one-shot (one shot is a total of a pluralityof irradiation steps) are repeatedly performed in order similarly to theoperations of FIGS. 13A to 13C. The examples of FIGS. 13A to 13C and 14Ato 14C show the case of performing multi-pass writing (multiplicity=2),for example. In such a case, the irradiation position is shifted in thex direction by about half the size of the irradiation region of thewhole of multiple beams, and as shown in FIG. 14B, the first one-shot(one shot is a total of a plurality of irradiation steps) of the secondlayer of the multi-pass writing is performed. As described referring toFIGS. 13B and 13C, the second one-shot to the eighth one-shot (one shotis a total of a plurality of irradiation steps) of the second layer ofthe multi-pass writing are performed one by one, hereinafter. As shownin FIG. 14C, the ninth one-shot to the sixteenth one-shot (one shot is atotal of a plurality of irradiation steps) are to be repeatedlyperformed in order similarly to the operations of FIGS. 13B to 13C.

As described above, according to the first embodiment, the precision ofirradiation time control and, further, the precision of dose control canbe improved while maintaining the restriction on a circuit installationspace. Moreover, since the data amount of the logic circuit 41 of theindividual blanking system is one bit, power consumption can besuppressed.

Second Embodiment

Although the first embodiment shows the case where the quantization unitΔ (a counter period of the common blanking system) is set uniquely, itis not limited thereto. The second embodiment describes the case wherethe quantization unit Δ is set variably. The apparatus structureaccording to the second embodiment is the same as that of FIG. 1. Theflowchart showing main steps of a writing method according to the secondembodiment is the same as that of FIG. 6. The content of the secondembodiment is the same as that of the first embodiment except what isparticularly described below.

FIGS. 15A to 15E are time charts for comparing the exposure waiting timeaccording to the second embodiment. FIG. 15A shows an example ofperforming beam irradiation or not performing beam irradiation of eachbeam in each irradiation step when dividing one shot into irradiationsteps of n times. In the case of dividing a shot into irradiation stepsof n times, the irradiation time per shot is (2^(n)−1) Δ at the maximum.FIG. 15A shows the case of n=10, as an example. In such a case, theirradiation time per shot is 1023 Δ at the maximum. In FIG. 15A, theirradiation time per shot is divided into irradiation steps of 10 times:1 Δ, 2 Δ, 4 Δ, 8 Δ, 16 Δ, 32 Δ, 64 Δ, 128 Δ, 256 Δ, and 512 Δ, which aredescribed in order from the shorter irradiation time. In FIG. 15A,irradiation steps whose irradiation time is less than 128 Δ are notshown. In FIG. 15A, the beam 1 is OFF (no beam irradiation) in theirradiation step whose irradiation time is 128 Δ, ON (beam irradiation)in the irradiation step whose irradiation time is 256 Δ, and ON (beamirradiation) in the irradiation step whose irradiation time is 512 Δ.The beam 2 is ON (beam irradiation) in the irradiation step whoseirradiation time is 128 Δ, ON (beam irradiation) in the irradiation stepwhose irradiation time is 256 Δ, and OFF (no beam irradiation) in theirradiation step whose irradiation time is 512 Δ. The beam 3 is OFF (nobeam irradiation) in the irradiation step whose irradiation time is 128Δ, ON (beam irradiation) in the irradiation step whose irradiation timeis 256 Δ, and OFF (no beam irradiation) in the irradiation step whoseirradiation time is 512 Δ. The beam 4 is ON (beam irradiation) in theirradiation step whose irradiation time is 128 Δ, ON (beam irradiation)in the irradiation step whose irradiation time is 256 Δ, and OFF (nobeam irradiation) in the irradiation step whose irradiation time is512Δ. The beam 5 is OFF (no beam irradiation) in the irradiation stepwhose irradiation time is 128 Δ, ON (beam irradiation) in theirradiation step whose irradiation time is 256 Δ, and OFF (no beamirradiation) in the irradiation step whose irradiation time is 512 Δ.

FIG. 15B shows an example of a total irradiation time per shot of eachbeam shown in FIG. 15A. FIG. 15B shows, as a comparative example, thecase where the quantization unit Δ is set uniquely. Moreover, withrespect to each beam shown in FIG. 15A, irradiation steps whoseirradiation time is less than 128 Δ are OFF (no beam irradiation). Insuch a case, as shown in FIG. 15B, the total irradiation time per shotof the beam 1 is 768 Δ, for example. The total irradiation time per shotof the beam 2 is 384 Δ, for example. The total irradiation time per shotof the beam 3 is 256 Δ, for example. The total irradiation time per shotof the beam 4 is 384 Δ, for example. The total irradiation time per shotof the beam 5 is 256 Δ, for example. On the other hand, as describedabove, the irradiation time per shot is 1023 Δ at the maximum. When thetotal irradiation time per shot of each beam is shorter than the maximumirradiation time, a waiting time occurs as shown in FIG. 15B. Then, inthe second embodiment, the quantization unit Δ is made to be variable inorder to reduce such a waiting time.

As shown in FIG. 15C, the quantization unit Δ is set such that themaximum value of the irradiation time per shot corresponds to the totalirradiation time per shot (a sum of irradiation time of irradiationsteps per shot) of a beam in the case where the total irradiation timeper shot of all the beams of multiple beams of all the shots is themaximum. In the example of FIG. 15B, the total irradiation time per shotof the beam 1 is 768 Δ, and is the maximum. Therefore, a quantizationunit Δ₁ is set such that the maximum irradiation time 768 Δ per shotcorresponds to 1023 Δ₁. Thereby, the repetition period (interval) ofeach shot can be shortened.

FIG. 15D shows, treating the maximum irradiation time 768 Δ as 1023 Δ₁,an example of irradiation or no irradiation of each beam in eachirradiation step in the case of again dividing one shot into irradiationsteps of ten times. In FIG. 15D, irradiation steps whose irradiationtime is less than 128 Δ are not shown. Since the beam 1 in FIG. 15D is abeam being a standard of a repetition period, it is set to be in the ONstate (beam irradiation) in all the irradiation steps. Since the beams 2and 4 are 384 Δ, when converted, they become about 512 Δ₁. Therefore,they are ON (beam irradiation) in the irradiation step whose irradiationtime is 512 Δ₁, and OFF (no beam irradiation) in the other irradiationsteps. Since beams 3 and 5 are 256 Δ, when converted, they become 341Δ₁. Therefore, they are ON (beam irradiation) in the irradiation stepswhose irradiation time is 256 Δ₁, 64 Δ₁, 16 Δ₁, 4 Δ₁, or 1 Δ₁, and OFF(no beam irradiation) in the other irradiation steps.

In FIG. 15E, for each shot, the quantization unit Δ is set such that themaximum value of the irradiation time per shot corresponds to the totalirradiation time per shot of a beam in the case where the totalirradiation time per shot of all the beams of multiple beams is themaximum. In the example of FIG. 15E, the total irradiation time per shotof the first one-shot of the beam 1 is 768 Δ, which is the maximum.Therefore, the quantization unit Δ₁ is set such that the maximumirradiation time 768 Δ per shot corresponds to 1023 Δ₁. Thereby, therepetition period (interval) of the first one-shot can be shortened.Moreover, the total irradiation time per shot of the second one-shot ofthe beam 2 is 640 Δ, which is the maximum. Therefore, the quantizationunit Δ₂ is set such that the maximum irradiation time 640 Δ per shotcorresponds to 1023 Δ₂. Thereby, the repetition period (interval) of thesecond one-shot can be shortened. Similarly, for each shot, Δ₃, Δ₄, . .. is to be set, hereinafter.

As described above, the quantization unit Δ is made to be variable.Thereby, the waiting time can be suppressed. Therefore, writing time canbe shortened. Although the case of n=10 is shown as an example in FIGS.15A to 15E, other case, namely the case other than n=10, is alsosimilarly applicable.

As described above, according to the second embodiment, it is possibleto reduce or suppress the waiting time at the time of performingirradiation steps.

Third Embodiment

In the embodiments described above, there has been described the case oftransmitting data for irradiation steps of n times in order of theamount of data from the largest, for example, but, however, it is notlimited thereto. In the third embodiment, there will be described thecase of transmitting data which has been made by combining data for aplurality of irradiation steps. The apparatus structure according to thethird embodiment is the same as that of FIG. 11. The flowchart showingmain steps of a writing method according to the third embodiment is thesame as that of FIG. 6. The content of the third embodiment is the sameas that of the first embodiment or the second embodiment except what isparticularly described below.

The time for data transmission can be included in the irradiation timeof an irradiation step by performing, in parallel, transmission of dataindicating ON/OFF of the (k−1)th bit ((k−1)th digit)) of each beam andthe irradiation step of the k-th bit (k-th digit) of each beam. However,since the irradiation time of an irradiation step becomes short if kbecomes small, it is difficult to include the transmission of dataindicating ON/OFF of the (k−1)th bit ((k−1)th digit)) in the irradiationtime of the irradiation step. Then, according to the third embodiment, adigit whose irradiation time is long and a digit whose irradiation timeis short are grouped. Thereby, the data transmission time of the nextgroup can be included in the sum total of grouped irradiation time inthe irradiation step. It is preferable to perform grouping by using aplurality of groups in order that the difference between totals ofgrouped irradiation time may become shorter. That is, for example, it ispreferable to perform grouping, such as to group an n-th digit (n-thbit) and the first digit (first bit), to group the (n−1)th digit((n−1)th bit)) and the second digit (second bit), and to group the(n−2)th digit ((n−2)th bit) and the third digit (third bit) and so on.

FIG. 16 is a schematic diagram showing the internal structure of anindividual blanking control circuit and a common blanking controlcircuit according to the third embodiment. FIG. 16 is the same as FIG. 5except that a selector 48 is added to each logic circuit 41 forindividual blanking control arranged at the blanking plate 204 in thebody of the writing apparatus 100, and individual blanking control foreach beam is controlled by, for example, a two-bit control signal. Here,the case of combining two irradiation steps to set one group is shown,for example. Therefore, one bit each is used as a control signal, foreach irradiation step in the group. Therefore, a two-bit control signalis used for each group. Even if the control signal is two bits, thelogic circuit itself of the control circuit for beam ON/OFF can beoverwhelmingly small compared with a circuit in which dose control isperformed using ten bits. Therefore, the installation area (of a circuiton the blanking aperture) can be made small while improving the responseof blanking control (using a common blanking system). In other words,even in the case of arranging a logic circuit on the blanking plate 204having a narrow installation space, precision of dose control can beimproved while realizing a smaller beam pitch.

FIG. 17 is a flowchart showing a beam ON/OFF switching operation withrespect to a part of an irradiation step of one shot according to thethird embodiment. FIG. 17 shows one beam (the beam 1) as an example inmultiple beams. Irradiation steps of: from a group of the n-th bit (n-thdigit) and the first bit (first digit) to a group of the (n−1)th bit((n−1)th digit)) and the second bit (second digit) of the beam 1, areshown, for example. As for irradiation time arrangement data, there isshown the case of the n-th bit (n-th digit) being “1”, the first bit(first digit) being “1”, the (n−1)th bit ((n−1)th digit) being “0”, andthe second bit (second digit) being “1”, for example.

First, in response to the input of a read signal of the group of then-th bit (n-th digit) and the first bit (first digit), the individualregister 42 (an individual register signal 1 (the n-th digit) and anindividual register signal 2 (the first digit)) outputs ON/OFF signalsin parallel (as parallel transmission signals), based on the stored dataof the n-th bit (n-th digit) and the first bit (first digit). Since atwo-bit signal is used in the third embodiment, it is necessary toselect and switch a signal. Referring to FIG. 17, first, data of theindividual register signal 1 is selected by the selector 48, and an ONsignal of the n-th bit (the n-th digit) is output to the individualamplifier. Next, with respect to the output of the individual register42, data of the individual register 2 is selected by the switching ofthe selector 48, and the output of the n-th bit (the n-th digit) isswitched to the output of the first bit (the first digit). Thisswitching is sequentially repeated for each irradiation step.

Since the data of the n-th bit (the n-th digit) is data indicating ON,the individual amplifier 46 (the individual amplifier 1) outputs an ONvoltage to be applied to the blanking electrode 24 for the beam 1. Onthe other hand, in the logic circuit 132 for common blanking, ON/OFF isswitched depending upon the timing data of ten bits of each irradiationstep. In the common blanking system, an ON signal is output during theirradiation time of each irradiation step. For example, if Δ=1 ns, theirradiation time of the first irradiation step (for example, the tenthdigit (the tenth bit)) is Δ×512=512 ns. The irradiation time of thesecond irradiation step (for example, the first digit (the first bit))is Δ×1=1 ns. The irradiation time of the third irradiation step (forexample, the ninth digit (the ninth bit)) is Δ×256=256 ns. Theirradiation time of the fourth irradiation step (for example, the seconddigit (the second bit)) is Δ×2=2 ns. Similarly, it is ON during theirradiation time of each digit (each bit) of each group, hereafter. Inthe logic circuit 132, when the timing data of each irradiation step isinput into the register 50, the register 50 outputs the data indicatingON of the k-th digit (the k-th bit), the counter 52 counts theirradiation time of the k-th digit (the k-th bit), and it is controlledto be OFF after the irradiation time has passed. Hereafter, beamirradiation is hereafter performed in order for each group.

As described above, according to the third embodiment, data transmissiontime can be included in the total grouped irradiation time in theirradiation step.

Although, in the third embodiment, the case of using the transmissionchannel where a two bit parallel shift register is used is described, itis also acceptable to use one bit serial transmission as long as asufficient transmission rate can be obtained. The design of thetransmission channel may be suitably selected by an engineer concerned.Moreover, although it has the structure in which two data is switched bythe selector, it is also effective to perform transmission in order byusing a shift register without using a selector.

Furthermore, although the configuration of the case of grouping twoirradiation steps has been described as the third embodiment, it is notlimited thereto. For example, if three irradiation steps are grouped,the total time of a data transmission time and a grouped irradiationtime in an irradiation step can be more uniformized. If the number ofgrouped irradiation steps is increased, uniformity can be enhanced. Forexample, when the irradiation step is each digit of a binary number, ifthe number of irradiation steps to be grouped is three or four, asufficient uniformity result can be acquired. However, when the numberof irradiation steps is increased, the number of necessary registers isalso increased, which results in increasing the circuit area. Therefore,the number of irradiation steps to be grouped is to be suitably selectedaccording to a demand. A concrete embodiment is not limited to what isdescribed above. Various embodiments can be selected based on the gistof the present invention that the transmission time of group data is tobe included in the total grouped irradiation time in the irradiationstep.

Fourth Embodiment

In each embodiment described above, each logic circuit 41 for individualblanking control is arranged on the blanking plate 204, but, however, itmay be arranged outside. In the fourth embodiment, the case of arrangingeach logic circuit 41 for individual blanking control outside theblanking plate 204 will be described. The apparatus structure accordingto the fourth embodiment is the same as that of FIG. 1 except that eachlogic circuit 41 for individual blanking control is arranged at theoutside of the blanking plate 204. The flowchart showing main steps of awriting method according to the fourth embodiment is the same as that ofFIG. 6. The content of the fourth embodiment is the same as that of anyone of the first to third embodiments except what is particularlydescribed below.

FIG. 18 is a schematic diagram explaining the arrangement state betweenthe logic circuit and the blanking plate 204 according to the fourthembodiment. In the fourth embodiment, each logic circuit 41 forindividual blanking control and each amplifier 46 are arranged in thelogic circuit 134 arranged outside the writing unit 150, and connectedto each electrode 24 for individual blanking control by wiring. In sucha structure, since the wiring becomes long, crosstalk and settling timeincrease. However, as described above, according to the fourthembodiment, since after having performed ON/OFF switching by theindividual blanking system and having waited for voltage stability,ON/OFF switching is performed by the common blanking system, theirradiation time can be controlled highly accurately without beingaffected by crosstalk and settling time even if they increase.

Fifth Embodiment

Although, in each embodiment described above, blanking control isperformed for each time irradiation step of irradiation of a pluralityof times made by dividing one shot, for each beam, by using the blankingplate 204 for individual blanking control and the deflector 212 forcommon blanking, it is not limited thereto. In the fifth embodiment,there will be described a configuration in which blanking control isperformed for each time irradiation step of a plurality of irradiationtimes made by dividing one shot, for each beam, by using the blankingplate 204 for individual blanking control without using the deflector212 for common blanking.

FIG. 19 is a schematic diagram showing the structure of a writingapparatus according to the fifth embodiment. FIG. 19 is the same as FIG.1 except that the deflector 212 does not exist and output of the logiccircuit 132 is connected to the blanking plate 204. Main steps of awriting method according to the fifth embodiment are the same as thoseof FIG. 6. The content of the fifth embodiment is the same as that ofthe first embodiment except what is particularly described below.

FIG. 20 is a schematic diagram showing the internal structure of anindividual blanking control circuit and a common blanking controlcircuit according to the fifth embodiment. The content of FIG. 20 is thesame as that of FIG. 5 except that the deflector 212 does not exist andan output signal of the logic circuit 132 is input into the ANDcomputing unit 44 (AND circuit) instead of a signal from the deflectioncontrol circuit 130.

In the individual beam ON/OFF switching step (S116), an ON/OFF controlsignal (first ON/OFF control signal) for a beam is output by the logiccircuit (first logic circuit) of the beam concerned, for each beam, withrespect to each time irradiation of irradiation of a plurality of times,by using a plurality of logic circuits (first logic circuit) eachincluding the shift register 40 and the individual register 42 eachrespectively outputting a beam ON/OFF control signal to a correspondingbeam in multiple beams. Specifically, as described above, when inputtingdata of the k-th bit (the k-th digit), the individual register 42 ofeach beam outputs an ON/OFF signal to the AND computing unit 44 based onthe input data. If the data of the k-th bit (the k-th digit) is “1”, anON signal is to be output, and if it is “0”, an OFF signal is to beoutput.

In the common beam ON/OFF switching step (S118), for each beam, withrespect to each time irradiation of irradiation of a plurality of times,after a beam ON/OFF control signal has been switched by the logiccircuit for individual blanking, a beam ON/OFF control signal (secondON/OFF control signal) is output so that a beam may be in the ON stateduring the irradiation time corresponding to the irradiation concerned,by using the logic circuit 132 (second logic circuit) which collectivelyoutputs a beam ON/OFF control signal to the whole of multiple beams.Specifically, in the logic circuit 132 for common blanking, ON/OFF isswitched depending upon ten-bit timing data of each irradiation step.The logic circuit 132 outputs an ON/OFF control signal to the ANDcomputing unit 44. In the logic circuit 132, an ON signal is outputduring the irradiation time of each irradiation step.

In the blanking control step, the AND computing unit 44 performsblanking control so that a beam concerned may be in the ON state duringthe irradiation time corresponding to the irradiation concerned, whenboth the ON/OFF control signal for an individual beam and the ON/OFFcontrol signal for a common beam are ON control signals. When both theON/OFF control signal for an individual beam and the ON/OFF controlsignal for a common beam are ON control signals, the AND computing units44 outputs an ON signal to the amplifier 46, and, then, the amplifier 46applies an ON voltage to the electrode 24 of the individual blankingdeflector. In other case, the AND computing unit 44 outputs an OFFsignal to the amplifier 46, and, then, the amplifier 46 applies an OFFvoltage to the electrode 24 of the individual blanking deflector. Thus,when both the ON/OFF control signal for an individual beam and theON/OFF control signal for a common beam are ON control signals, theelectrode 24 (individual blanking system) of the individual blankingdeflector individually performs beam ON/OFF control so that the beamconcerned may be in the ON state during the irradiation timecorresponding to the irradiation concerned.

Since the individual blanking circuit is arranged in the large region ofthe blanking plate, time deviation is generated in operations of theindividual blanking circuit because of delay by the circuit or delay bythe length of wiring. However, if a beam-on signal is supplied from thecommon blanking when the operation of the individual blanking circuitaffected by the response speed gap has been settled, it is possible toavoid unstable beam irradiation caused by delay and the like of theindividual circuit.

As described above, even when the blanking plate 204 for individualblanking control is used without using the deflector 212 for commonblanking, the restriction on a circuit installation space can bemaintained like the first embodiment. Moreover, since the logic circuit41 for individual blanking has a data amount of one bit, powerconsumption can also be suppressed. Furthermore, there is an advantagethat the deflector 212 for common blanking can be omitted.

According to the present embodiment, the logic circuit 132 for commonblanking may be manufactured independently, or, alternatively, it canalso be manufactured, as an integrated circuit of a monolithicstructure, by being arranged at the peripheral part of the blankingplate. If the logic circuit 132 for common blanking is arranged at theperipheral part of the blanking plate, the wiring length to theindividual blanking circuit can be made short, which has an advantage offacilitating an exact timing control.

Although, in the example described above, the case of the logic circuit41 for individual blanking having a data amount of one bit is described,it is not limited thereto. The structure according to the fifthembodiment can also be applied to the case of a data amount of two bitslike the third embodiment. Moreover, the structure of the fifthembodiment is applicable to other embodiments.

Sixth Embodiment

Although, in each embodiment described above, the case where eachdivided irradiation step corresponds to each digit of a binary number isdescribed, the way of dividing is not limited thereto. Except for thedividing way to be corresponding to each digit of a binary number,divided irradiation steps can be depending upon a combination of variousdifferent time periods or same time periods. In the sixth embodiment,there will be described the case where irradiation step division isbased on a combination of various different time periods or same timeperiods. The apparatus structure is the same as that of FIG. 1 or FIG.19.

FIG. 21 is a flowchart showing main steps of a writing method accordingto the sixth embodiment. FIG. 21 is the same as FIG. 6 except that anirradiation time arrangement data generating step (S109) is executedinstead of the conversion to binary number step (S108).

The content of the present embodiment is the same as that of any one ofembodiments described above except what is particularly described below.

The combination of divided irradiation time (X0 Δ, X1 Δ, X2 Δ, . . . ,X(m−1) Δ) that can express an arbitrary irradiation time, which is up tothe maximum irradiation time Tmax, can be selected according to theconditions described below. (Hereinafter, the divided irradiation time(X0 Δ, X1 Δ, X2 Δ, . . . , X(m−1) Δ) will just be described as acombinatorial sequence (X0, X1, X2, . . . , X(m−1)) where Δ is omitted.)

First, combining can be performed based on definition of a dividedirradiation time of the first digit (k=0) as X0=1 and a dividedirradiation time of the k-th digit as Xk≤{Σ(Xi)}+1, (i=0 to (k−1)). Xkshall be an integer of 1 or more. Here, {Σ(Xi)} (i=0 to (k−1)) means(X0+X1+ . . . +X(k−2)+X(k−1)) that is an added value of parenthesized Xifrom X0 to X(k−1). Hereinafter, it will be explained using the sameexpression.

In the conditions described above, for example, since X0=1, X1 is either1 or 2. When X1=2, X2 is one of 1 to 4. Here, in the case of X2 is 3,with respect to a combinatorial sequence (X0, X2, X3)=(1, 2, 3),arbitrary time setting from 0 to 6 can be performed depending upon whichdigit is selected (added or not added).

Considering the case of Xk, with respect to the combinatorial sequence(X0, . . . , X(k−1)) of from X0 to X(k−1), arbitrary time setting from 0to Δ·{Σ(Xi)} (i=0 to (k−1)) can be performed. Then, with respect toanother combinatorial sequence (X0, . . . , X(k−1), Xk) in which Xk isadded, arbitrary irradiation time setting from 0 to {Σ(Xi)} (i=0 to(k−1)) can be performed when Xk is not selected, and arbitraryirradiation time setting from Xk to Xk+{Σ(Xi)} (i=0 to (k−1)) can beperformed when Xk is selected.

With respect to a settable region in the case of selecting Xk or notselecting Xk, if the maximum value +1 in not selecting Xk is defined asthe minimum value in selecting Xk (that is, Xk={Σ(Xi)}+1 (i=0 to (k−1)),the settable region becomes a setting region having a continuous valueof combined Xk. Therefore, as a divided time combination of acombinatorial sequence (X0, . . . , X(k−1), Xk), it is possible toarbitrarily set time from 0 to Xk+{Σ(Xi)} (i=0 to (k−1)), that is from 0to {Σ(Xi)} (i=0 to k).

Moreover, if defining Xk<{Σ(Xi)}+1 (i=0 to (k−1)), though the settablerange in the case of selecting Xk or not selecting Xk overlap with eachother (that is, there is an irradiation time which can be set in boththe case of selecting Xk and not selecting Xk), it is acceptable toperform such selection.

Furthermore, if increasing the number of terms (digits) of Xk to m terms(digits) so that the maximum irradiation time Tmax may be Tmax≤Δ·{Σ(Xi)}(i=0 to (m−1)), namely so that it may be set up to the maximumirradiation time Tmax, the combinatorial sequence (X0, X1, X2, . . . ,Xm−1) becomes a combination of divided time obtained by arbitrarilysetting time of from 0 to Tmax.

Here, the irradiation time T of each shot is expressed by thecombination of Xi to be T=Δ·{Σ(ai·Xi)} (i=0 to (m−1)).

Here, ai is expressed by 1 or 0 corresponding to the case of selectingor not-selecting. Therefore, if pseudoly expressing the sequence of ai(a0, a1, a2, a3, . . . , a(m−1)) by 0 or 1 like a binary number, it isconvenient in processing.

Particularly, if defining Xk={Σ(Xi)}+1 (i=0 to (k−1)), Xk (Xk=2^(k))expressing each digit of a binary number satisfies the conditionsdescribed above, and m being the number of necessary digits can beexpressed by the minimum number.

Another example satisfying the conditions described above is explainedbelow. As an example of combining irradiation steps of the same timeperiod, when N=700 in the case of A=1 ns, it is possible to performirradiation by combining the irradiation steps of 256 ns (beam ON), 256ns (beam ON), 256 ns (beam OFF), 64 ns (beam ON), 64 ns (beam ON), 64 ns(beam OFF), 16 ns (beam ON), 16 ns (beam ON), 16 ns (beam ON), 4 ns(beam ON), 4 ns (beam ON), 4 ns (beam ON), 1 ns (beam OFF), 1 ns (beamOFF) and 1 ns (beam OFF). In that case, irradiation is performed byirradiation steps of fifteen times. This dividing way of irradiationsteps, compared with the case where each irradiation step iscorresponding to each digit of a binary number, has a possibility of athroughput decrease because the number of irradiation steps increases.However, at the same time, it has an advantage that control circuitdesign can be easily performed because of the repletion of the same timeperiod. Thus, although the dividing way of the irradiation stepaccording to each digit of a binary number has an advantage that thenumber of irradiation steps becomes the minimum, various combinationother than what is described above can be performed. The combinationtype should be selected according to a demand.

In the irradiation time arrangement data generating step (S109), using asequence of a predetermined number of terms in which each value is lessthan or equal to a value obtained by adding 1 to the sum of previousvalues up to a value just before the each value concerned, the bitconversion unit 66 respectively generates, for each shot, irradiationtime arrangement data so that the total of values obtained by selectingor not selecting a value of each term of the sequence may become theirradiation time (in this case, a gray level value N) of each beam ofelectron multi-beams. The irradiation time arrangement data isidentified, for example, by “1” when selected and by “0” when notselected. For example, using the above combinatorial sequence (1, 1, 1,4, 4, 4, 16, 16, 16, 64, 64, 64, 256, 256, 256) of the fifteen terms, inthe case of defining N=700 by Δ=1 ns, it becomes: 1 (non-selected=0), 1(non-selected=0), 1 (non-selected=0), 4 (selected=1), 4 (selected=1), 4(selected=1), 16 (selected=1), 16 (selected=1), 16 (selected=1), 64(non-selected=0), 64 (selected=1), 64 (selected=1), 256(non-selected=0), 256 (selected=1), and 256 (selected=1). For example,when performing irradiation sequentially from the larger (longer) value(irradiation time), the irradiation time arrangement data of N=700 canbe defined as “110110111111000”. Although, values are arranged, in thiscase, from the larger to the smaller as an example, it is alsopreferable to define from the smaller to the larger, in accordance withthe original order of the sequence, as “000111111011011”. It should beunderstood that the irradiation time indicated by each digit (term) ofthe irradiation time arrangement data is related with the value of eachterm of the pre-set sequence.

As described above, each shot is not restricted to the value of eachdigit of a binary number, and may be divided into a plurality ofirradiation steps by combination of irradiation time of other sequencevalues.

In the writing step (S114) based on irradiation time of a target digit,for each beam shot, writing is performed based on the irradiation timeof a target digit (for example, the k-th bit (k-th digit)) in theirradiation divided into a plurality of irradiation steps. Thus, foreach beam shot, irradiation of a beam concerned is divided intoirradiation performed the number of times equal to the number of termsof a sequence, wherein the sequence is equivalent to a combination ofirradiations of the irradiation time periods of the terms eachindicating an irradiation time period of a corresponding value of thesequence, and based on the irradiation time arrangement data,irradiation is performed onto the target object by, in order,irradiating a beam of the irradiation time period corresponding to thevalue of each selected term.

Moreover, as described in the third embodiment, it is also preferable tohave a structure in which data for a plurality of irradiation steps arecombined to be transmitted. In other words, as to irradiation performedthe number of times equal to the number of sequence digits, it ispreferable to set a plurality of groups composed of a plurality ofvalues each being a value of each digit of a sequence, and then, beamirradiation is performed for each group in order. Thereby, the datatransmission time of the next group can be included in the total ofgrouped irradiation time in an irradiation step. Like the thirdembodiment, it is preferable to set a plurality of groups so that thedifference between the totals of grouped irradiation time may be moreuniform. For example, it is preferable to perform grouping, such as agroup of the n-th digit (n-th bit) and the first digit (first bit), agroup of the (n−1)th digit ((n−1)th bit) and the second digit (secondbit), a group of the (n−2)th digit ((n−2)th bit) and the third digit(third bit) . . . and so on.

The embodiments have been explained referring to concrete examplesdescribed above. However, the present invention is not limited to thesespecific examples.

Although, in the structure according to embodiments described above, thelimiting aperture member 206 is arranged in the upstream part of thedeflector 208 in the electron lens barrel, it is not limited thereto.For example, the limiting aperture member 206 may be arranged in thedownstream part of the deflector 208, or between deflectors when amultiple stage deflector is used. In such a structure, it should beconfigured so that, when a beam is deflected by the deflector 208, thebeam current amount blocked by the aperture member may be sufficientlysmall, and, on the other hand, when blanking deflection is performed, itshould be designed so that a beam may be sufficiently blocked becausethe orbit deviates largely and so that, at the position of the aperturemember 206, the deviation amount of the beam orbit by blankingdeflection may become larger than the deviation amount of the beam orbitby the deflector. The structure of the electron lens barrel is notlimited to what is described in the above embodiments, it should beappropriately selected.

Moreover, while the apparatus configuration, control method, and thelike not directly necessary for explaining the present invention are notdescribed, some or all of them may be suitably selected and used whenneeded. For example, although description of the configuration of acontrol unit for controlling the writing apparatus 100 is omitted, itshould be understood that some or all of the configuration of thecontrol unit is to be selected and used appropriately when necessary.

In addition, any other multi charged particle beam writing apparatus anda method thereof that include elements of the present invention and thatcan be appropriately modified by those skilled in the art are includedwithin the scope of the present invention.

Additional advantages and modification will readily occur to thoseskilled in the art. Therefore, the invention in its broader aspects isnot limited to the specific details and representative embodiments shownand described herein. Accordingly, various modifications may be madewithout departing from the spirit or scope of the general inventiveconcept as defined by the appended claims and their equivalents.

1-7. (canceled) 8: A multi charged particle beam writing methodcomprising: generating, respectively, for each shot, irradiation timearrangement data, while using a sequence whose number of terms is apredetermined number, so that a total of values obtained by selecting ornot selecting a value of each term of the sequence becomes anirradiation time of each beam of multi-beams of charged particle beam,wherein each value of the sequence is less than or equal to a valueobtained by adding 1 to a sum of previous values up to a value justbefore the each value concerned; and dividing, for each beam shot,irradiation of a beam concerned into irradiation performed a number oftimes equal to the number of terms of the sequence, wherein the sequenceis equivalent to a combination of irradiations of irradiation timeperiods of the terms each indicating an irradiation time period of acorresponding value of the sequence, and irradiating the beam of theirradiation time period corresponding to a value of each selected termonto a target object in order, based on the irradiation time arrangementdata. 9: The method according to claim 8, wherein, with respect to theirradiation performed the number of times equal to the number of terms,a plurality of groups composed of a plurality of values each being thevalue of the each term of the sequence are set, and beam irradiation isperformed for each of the plurality of groups in order.